Normally-off AlGaN/GaN Recessed MOS-HEMTs on Normally-on Epitaxial Structures for Microwave Power Applications

被引：0

作者：

Xuan, L. Trinh ^{[1
]}

Aubry, R. ^{[1
]}

Michel, N. ^{[1
]}

Patard, O. ^{[1
]}

Jacquet, J. -C. ^{[1
]}

Piotrowicz, S. ^{[1
]}

Oualli, M. ^{[1
]}

Gamarra, P. ^{[1
]}

Potier, C. ^{[1
]}

Lancereau, D. ^{[1
]}

Delage, S. L. ^{[1
]}

Laurent, S. ^{[2
]}

Bouysse, P. ^{[2
]}

Quere, R. ^{[2
]}

机构：

[1] III V Lab, Palaiseau, France

[2] Univ Limoges, CNRS, XLIM Lab, Limoges, France

来源：

2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2016年

关键词：

Gallium Nitride (GaN); High Electron Mobility Transistor (HEMT); normally-off; gate recess; Al2O3 gate oxide; dynamic ON-resistance (R-ON); charge trapping effects; GAN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the realization and characterization of normally-off recessed MOS-HEMTs on a Kaband-dedicated AlGaN/GaN epitaxial structure. Previous HEMTs results on this structure feature an output power of 3.5 W/mm with PAE of 39 % at 30 GHz CW. Normally-off operation was achieved through the use of gate recess combined with a Al2O3 gate oxide, by a fabrication process compatible with that of normallyon high-frequency power HEMTs. Electrical performances include threshold voltage over 1 V, pulsed drain current in excess of 400 mA/mm and fmax of 35 GHz. Dynamic RON transients after switching events were investigated, showing thermally-activated increase of RON over 10 decades of time. Low-frequency output-dmittance measurements were also conducted to evaluate the impact of gate recess etching on charge trapping behavior.

引用

页码：65 / 68

页数：4

共 11 条

[1] ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT [J].