Synthesis of Silicon Nanowire Arrays by Metal-Assisted Chemical Etching in Aqueous NH4HF2 Solution

被引：4

作者：

Naama, S. ^{[1
]}

Hadjersi, T. ^{[1
]}

Nezzal, G. ^{[2
]}

Guerbous, L. ^{[3
]}

机构：

[1] UDTS, Algiers, Algeria

[2] USTHB, LPT, FGMGP, Dept Genie Proc, Bab Ezzouar 16111, Alger, Algeria

[3] CRNA, Algiers, Algeria

来源：

JOURNAL OF NANO RESEARCH | 2013年 / 21卷

关键词：

Nanostructure; silicon nanowires; chemical etching; scanning electron microscopy (SEM); photoluminescence (PL); OXIDIZED POROUS SILICON; LASER-ABLATION; PHOTOLUMINESCENCE; SI; FABRICATION; EMISSION; UNIFORM;

D O I：

10.4028/www.scientific.net/JNanoR.21.109

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

One-step metal-assisted electroless chemical etching of p-type silicon substrate in NH4HF2/AgNO3 solution was investigated. The effect of different etching parameters including etching time, temperature, AgNO3 concentration and NH4HF2 concentration were investigated. The etched layers formed were investigated by scanning electron microscopy (SEM) and Photoluminescence. It was found that the etched layer was formed by well-aligned silicon nanowires. It is noted that their density and length strongly depend on etching parameters. Room temperature photoluminescence (PL) from etched layer was observed. It was observed that PL peak intensity increases significantly with AgNO3 concentration.

引用

页码：109 / 115

页数：7

共 50 条

[41] Effect of catalyst shape on etching orientation in metal-assisted chemical etching of silicon
Xia, Weiwei
Zhu, Jun
Wang, Haibo
Zeng, Xianghua
CRYSTENGCOMM, 2014, 16 (20): : 4289 - 4297
[42] Using HCl to Control Silver Dissolution in Metal-Assisted Chemical Etching of Silicon
Williams, Max O.
Jervell, Ada L. H.
Hiller, Daniel
Zacharias, Margit
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (18):
[43] N-type silicon nanowires prepared by silver metal-assisted chemical etching: Fabrication and optical properties
Le Thanh Cong
Nguyen Thi Ngoc Lam
Nguyen Truong Giang
Pham The Kien
Nguyen Duc Dung
Ngo Ngoc Ha
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 90 : 198 - 204
[44] Ag-Mediated Charge Transport during Metal-Assisted Chemical Etching of Silicon Nanowires
Geyer, Nadine
Fuhrmann, Bodo
Leipner, Hartmut S.
Werner, Peter
ACS APPLIED MATERIALS & INTERFACES, 2013, 5 (10) : 4302 - 4308
[45] Effect of Various Copper Salt Precursors on Metal-Assisted Chemical Etching of Silicon
Williams, Max Owen
Kolhep, Maximilian
Zacharias, Margit
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2019, 8 (02) : P93 - P98
[46] Tailored Height Gradients in Vertical Nanowire Arrays via Mechanical and Electronic Modulation of Metal-Assisted Chemical Etching
Otte, M. A.
Solis-Tinoco, V.
Prieto, P.
Borrise, X.
Lechuga, L. M.
Gonzalez, M. U.
Sepulveda, B.
SMALL, 2015, 11 (33) : 4201 - 4208
[47] A facile synthesis of silicon nanowires/micropillars structure using lithography and metal-assisted chemical etching method
Xi, Yilian
Zhang, Weijia
Fan, Zhigiang
Ma, Qiang
Wang, Shan
Ma, Denghao
Jiang, Zhaoyi
Li, Hongzhen
Zhang, Yulong
JOURNAL OF SOLID STATE CHEMISTRY, 2018, 258 : 181 - 190
[48] Electron transport characteristics of silicon nanowires by metal-assisted chemical etching
Qi, Yangyang
Wang, Zhen
Zhang, Mingliang
Wang, Xiaodong
Ji, An
Yang, Fuhua
AIP ADVANCES, 2014, 4 (03)
[49] Fabrication and characterization of silicon nanostructures based on metal-assisted chemical etching
Zhang, Wendong
Fan, Xuge
Sang, Shengbo
Li, Pengwei
Li, Gang
Sun, Yongjiao
Hu, Jie
KOREAN JOURNAL OF CHEMICAL ENGINEERING, 2014, 31 (01) : 62 - 67
[50] Growth, Structure and Optical Properties of Silicon Nanowires Formed by Metal-Assisted Chemical Etching
Gonchar, K. A.
Osminkina, L. A.
Galkin, R. A.
Gongalsky, M. B.
Marshov, V. S.
Timoshenko, V. Yu
Kulmas, M. N.
Solovyev, V. V.
Kudryavtsev, A. A.
Sivakov, V. A.
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2012, 7 (06) : 602 - 606

← 1 2 3 4 5 →