Irradiation induced defects in fluorine doped silica

被引：18

作者：

Origho, G. ^{[1
]}

Boukenter, A. ^{[1
]}

Girard, S. ^{[2
]}

Richard, N. ^{[2
]}

Cannas, M. ^{[3
]}

Boscaino, R. ^{[3
]}

Ouerdane, Y. ^{[1
]}

机构：

[1] Univ St Etienne, CNRS, UMR 5516, Lab Hubert Curien, F-42000 St Etienne, France

[2] CEA DIF, Dep Concept & Realisat Experimentat, F-91680 Bruyeres Le Chatel, France

[3] Univ Palermo, Dipartimento Sci Fis & Astron, I-90123 Palermo, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2008年 / 266卷 / 12-13期

关键词：

silica; defects; fluorine doping; optical fiber; electron spin resonance;

D O I：

10.1016/j.nimb.2008.03.181

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The role of fluorine doping in the response to UV pulsed laser and gamma radiation of silica preforms and fibers was studied using electron spin resonance (ESR) spectroscopy. Exposure to radiation mainly generates E' centers, with the same effectiveness in fibers and in preforms. The E' concentration in F-doped silica fibers is found to increase with UV energy fluence till a saturation value, consistently with a precursor conversion process. These results show the fluorine role in reducing the strained Si-O bonds thus improving the radiation hardness of silica, also after drawing process. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2918 / 2922

页数：5

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