A Review of GaN MMIC Power Amplifier Technologies for Millimeter-Wave Applications

被引：5

作者：

Nakatani, Keigo ^{[1
]}

Yamaguchi, Yutaro ^{[1
]}

Torii, Takuma ^{[1
]}

Tsuru, Masaomi ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Informat Technol R&D Ctr, Kamakura 2478501, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2022年 / E105C卷 / 10期

关键词：

  GaN; SATCOM; 5G; high power amplifier; MMIC; Doherty amplifier; millimeter wave;

D O I：

10.1587/transele.2022MMI0006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN microwave monolithic integrated circuit (MMIC) power amplifiers (PAs) technologies for millimeter-wave (mm-wave) ap-plications are reviewed in this paper. In the mm-wave band, GaN PAs have achieved high-output power as much as traveling wave tube amplifiers used in satellite communications. Additionally, GaN PAs have been integrated enough to be used for 5G and Beyond-5G. In this paper, a high accuracy large-signal GaN-HEMT modeling technique including the trapping effects is introduced in mm-waves. The prototyped PAs designed with the novel modeling technique have achieved RF performance comparable to that of the state-of-the-art GaN PAs in mm-wave.

引用

页码：433 / 440

页数：8