A Review of GaN MMIC Power Amplifier Technologies for Millimeter-Wave Applications

被引：5

作者：

Nakatani, Keigo ^{[1
]}

Yamaguchi, Yutaro ^{[1
]}

Torii, Takuma ^{[1
]}

Tsuru, Masaomi ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Informat Technol R&D Ctr, Kamakura 2478501, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2022年 / E105C卷 / 10期

关键词：

  GaN; SATCOM; 5G; high power amplifier; MMIC; Doherty amplifier; millimeter wave;

D O I：

10.1587/transele.2022MMI0006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN microwave monolithic integrated circuit (MMIC) power amplifiers (PAs) technologies for millimeter-wave (mm-wave) ap-plications are reviewed in this paper. In the mm-wave band, GaN PAs have achieved high-output power as much as traveling wave tube amplifiers used in satellite communications. Additionally, GaN PAs have been integrated enough to be used for 5G and Beyond-5G. In this paper, a high accuracy large-signal GaN-HEMT modeling technique including the trapping effects is introduced in mm-waves. The prototyped PAs designed with the novel modeling technique have achieved RF performance comparable to that of the state-of-the-art GaN PAs in mm-wave.

引用

页码：433 / 440

页数：8

共 50 条

[21] Behavioral modeling and linearization of a millimeter-wave power amplifier
Melczarsky, Ilan
Gilabert, Pere L.
Di Giacomo, Valeria
Bertran, Eduard
Filicori, Fabio
INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 2009, 1 (02) : 127 - 136
[22] High-power GaN-HEMT with low current collapse for millimeter-wave amplifier
Makiyama, Kozo
Ohki, Toshihiro
Okamoto, Naoya
Kanamura, Masahito
Masuda, Satoshi
Nakasha, Yasuhiro
Joshin, Kazukiyo
Imanishi, Kenji
Hara, Naoki
Ozaki, Shiro
Nakamura, Norikazu
Kikkawa, Toshihide
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8): : 2442 - 2444
[23] A MILLIMETER-WAVE MONOLITHIC HIGH-POWER AMPLIFIER USING A NOVEL TANDEM FET
TAKAGI, T
SEINO, K
KASHIWA, T
HASHIMOTO, T
TAKEDA, F
IEICE TRANSACTIONS ON ELECTRONICS, 1992, E75C (06) : 669 - 673
[24] A GaN MMIC Stacked Doherty Power Amplifier For Space Applications
Costanzo, F.
Camarchia, V
Carvalho, N. B.
Colantonio, P.
Piacibello, A.
Quaglia, R.
Valenta, V.
Giofre, R.
2022 IEEE TOPICAL CONFERENCE ON RF/MICROWAVE POWER AMPLIFIERS FOR RADIO AND WIRELESS APPLICATIONS (PAWR), 2022, : 29 - 31
[25] CW20-WAlGaN/GaN FET power amplifier for quasi-millimeter wave applications
Murase, Y.
Wakejima, A.
Inoue, T.
Yamanoguchi, K.
Tanomura, M.
Nakayama, T.
Okamoto, Y.
Ota, K.
Ando, Y.
Kuroda, N.
Matsunaga, K.
Miyamoto, H.
IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2007 IEEE CSIC SYMPOSIUM, TECHNOLOGY DIGEST, 2007, : 40 - 43
[26] Development of a high transconductance GaN MMIC technology for millimeter wave applications
Haupt, C.
Maroldt, S.
Quay, R.
Pletschen, W.
Leuther, A.
Ambacher, O.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, 2011, 8 (02): : 297 - 299
[27] The research progress of millimeter-wave power applications
Lu, Dun
Fu, Wen-Jie
Mikhail, Glyavin
Tang, Xiang-Wei
Hu, Min
Liu, Sheng-Gang
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2024, 43 (04) : 503 - 519
[28] A Transformer-Matched Millimeter-Wave CMOS Power Amplifier
Park, Seungwon
Jeon, Sanggeun
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2016, 16 (05) : 687 - 694
[29] A Q-Band MMIC Power Amplifier in GaN on Si Technology for Space Applications
Costanzo, Ferdinando
Giofre, Rocco
Polli, Giorgio
Salvucci, Alessandro
Limiti, Ernesto
INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC), 2018,
[30] Review of Millimeter-wave CMOS Power Amplifiers
Wang, Huei
Lin, Jung-Lin
Tsai, Zuo-Min
2018 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT), 2018, : 1 - 3

← 1 2 3 4 5 →