A Review of GaN MMIC Power Amplifier Technologies for Millimeter-Wave Applications

被引：5
|
作者：
Nakatani, Keigo [1 ]
Yamaguchi, Yutaro [1 ]
Torii, Takuma [1 ]
Tsuru, Masaomi [1 ]
机构：
[1] Mitsubishi Electr Corp, Informat Technol R&D Ctr, Kamakura 2478501, Japan
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2022年 / E105C卷 / 10期
关键词：
  GaN; SATCOM; 5G; high power amplifier; MMIC; Doherty amplifier; millimeter wave;
D O I：
10.1587/transele.2022MMI0006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaN microwave monolithic integrated circuit (MMIC) power amplifiers (PAs) technologies for millimeter-wave (mm-wave) ap-plications are reviewed in this paper. In the mm-wave band, GaN PAs have achieved high-output power as much as traveling wave tube amplifiers used in satellite communications. Additionally, GaN PAs have been integrated enough to be used for 5G and Beyond-5G. In this paper, a high accuracy large-signal GaN-HEMT modeling technique including the trapping effects is introduced in mm-waves. The prototyped PAs designed with the novel modeling technique have achieved RF performance comparable to that of the state-of-the-art GaN PAs in mm-wave.
引用
收藏
页码：433 / 440
页数：8
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