Influence of Ge composition in the Cu2Sn1-xGexS3 thin-film photovoltaic absorber prepared by sulfurization of laminated metallic precursor

被引：32

作者：

Htay, Myo Than ^{[1
,2
]}

Mandokoro, Takahiro ^{[1
]}

Seki, Hiroaki ^{[1
]}

Sakaizawa, Takanori ^{[1
]}

Momose, Noritaka ^{[4
]}

Taishi, Toshinori ^{[3
]}

Hashimoto, Yoshio ^{[1
,2
]}

Ito, Kentaro ^{[1
]}

机构：

[1] Shinshu Univ, Fac Engn, Dept Elect & Elect Engn, Nagano 3808553, Japan

[2] Shinshu Univ, Inst Carbon Sci & Technol, Nagano 3808553, Japan

[3] Shinshu Univ, Ctr Energy & Environm Sci, Nagano 3808553, Japan

[4] Natl Inst Technol, Dept Elect & Elect Engn, Nagano 3818550, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2015年 / 140卷

关键词：

Cu2Sn1-xGexS3; Sulfurization; Thin film; Raman spectrum; Compound semiconductor; Solar cell; CU2SNS3; SOLAR-CELL; CRYSTAL-STRUCTURE; OPTICAL-PROPERTIES; FABRICATION; SULFIDES;

D O I：

10.1016/j.solmat.2015.04.030

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Cu2Sn1-xGexS3 thin-film absorbers are prepared by sulfurization of laminated precursors. The crystal grain size is enhanced under higher growth temperature and/or sulfur pressure. By the XRD and Raman analyses, the crystal alloy is considered to be composed of majority monoclinic phase with minority secondary phase such as Cu-2(Sn1-xGex)(3)S-7 throughout the whole Ge/(Ge+Sn) composition range. The optical band gap is observed to be varied between 0.94 eV and 1.30 eV in relation with the Ge contents. A photovoltaic conversion efficiency of about 2% is obtained in the sample utilizing Cu2Sn0.6Ge0.4S3 absorber. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：312 / 319

页数：8

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