Interfacial Reactions in Ni/PbSe

被引:3
作者
Musa, Ahmed Fouad [1 ,2 ]
Chen, Sinn-wen [1 ,3 ]
机构
[1] Natl Tsing Hua Univ, Dept Chem Engn, Hsinchu, Taiwan
[2] Al Azhar Univ, Chem Dept, Fac Sci, Assiut, Egypt
[3] Natl Tsing Hua Univ, High Entropy Mat Ctr, Hsinchu, Taiwan
关键词
Thermoelectric; PbSe; Ni; interfacial reactions; PERFORMANCE; STATE; PBSE; NI;
D O I
10.1007/s11664-020-08344-y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
PbSe-based alloys are promising thermoelectric materials, and in these materials, nickel is commonly used as barrier layer. This study investigates the interfacial reactions in Ni/PbSe couples reacted at 250 degrees C, 300 degrees C, 350 degrees C and 400 degrees C. The reaction couples are prepared by electroplating a Ni layer on PbSe substrates. Experimental results show that one reaction phase, Ni3Pb2Se2, is formed in the Ni/PbSe couples reacted at 300 degrees C, 350 degrees C and 400 degrees C, but no interfacial reaction occurs at 250 degrees C. The reaction layer grows thicker with higher temperature and longer reaction time. The growth rate constants at 300 degrees C, 350 degrees C and 400 degrees C are 1.8, 3.5 and 11.8 mu m/root d, respectively. It is concluded that the reaction path is Ni/Ni3Pb2Se2/PbSe, and that nickel is the fastest diffusion species in the Ni/PbSe couples.
引用
收藏
页码:6068 / 6072
页数:5
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