Improvement of Rubrene Thin Film Transistor with Self Assembled Monolayer of Octadecyltrichlorosilane (OTS)

被引：1
|
作者：
Sinha, S. [1 ]
Wang, C. -H. [2 ]
Islam, A. K. M. Maidul
Yang, Y. -W. [2 ]
Mukherjee, M. [1 ]
机构：
[1] Saha Inst Nucl Phys, Surface Phys Div, 1-AF Bidhannagar, Kolkata 700064, India
[2] Natl Synchrotron Radiat Res Ctr, Hsinchu, Taiwan
来源：
SOLID STATE PHYSICS, PTS 1 AND 2 | 2012年 / 1447卷
关键词：
OTFT; Rubrene; UHV; Untreated and OTS treated SiO2; Mobility; I-On/I-Off;
D O I：
10.1063/1.4710331
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have fabricated organic thin film transistors (OTFTs) using rubrene as an active layer with untreated SiO2 and OTS modified SiO2 gate dielectrics. The effect of the OTS treatment on the electric characteristics of OTFT was investigated. As a result of OTS modification, we can improve the mobility to 0.12x10(-2) cm(2)/V.S and I-On/I-Off ratio to 0.98x10(5).
引用
收藏
页码：977 / +
页数：2
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