Polaron relaxation dynamics in InAs/GaAs self-assembled quantum dots

被引:13
作者
Zibik, EA
Wilson, LR
Green, RP
Wells, JPR
Phillips, PJ
Carder, DA
Cockburn, JW
Skolnick, MS
Steer, MJ
Liu, HY
Hopkinson, M
机构
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[2] EURATOM, FOM, Inst Rijnhizen, NL-3430 BE Nieuwegein, Netherlands
[3] Univ Sheffield, EPSRC Natl Ctr Technol 3V, Sheffield S1 3JD, S Yorkshire, England
关键词
quantum dots; polaron effect; intersublevel transitions; time-resolved spectroscopy;
D O I
10.1016/j.physe.2003.11.065
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Polaron decay in n-type InAs quantum dots has been investigated using energy dependent, mid-infrared pump-probe spectroscopy. By studying samples with differing ground state to first excited state energy separations the relaxation time has been measured between similar to40 and 60 meV. The low-temperature decay time increases with increasing detuning between the pump energy and the optical phonon energy and is maximum (55 ps) at 56 meV. From the experimentally determined decay times we are able to extract a low-temperature optical phonon lifetime of 13 ps for InAs QDs. We find that the polaron decay time decreases by a factor of similar to2 at room temperature due to the reduction of the optical phonon lifetime. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:405 / 408
页数:4
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