Self-aligned multi-channel silicon nanowire field-effect transistors

被引：19

作者：

Zhu, Hao ^{[1
,2
]}

Li, Qiliang ^{[1
,2
]}

Yuan, Hui ^{[1
,2
]}

Baumgart, Helmut ^{[3
]}

Ioannou, Dimitris E. ^{[1
]}

Richter, Curt A. ^{[2
]}

机构：

[1] George Mason Univ, Dept Elect & Comp Engn, Fairfax, VA 22030 USA

[2] NIST, Semicond & Dimens Metrol Div, Gaithersburg, MD 20899 USA

[3] Old Dominion Univ, Dept Elect & Comp Engn, Norfolk, VA 23529 USA

来源：

SOLID-STATE ELECTRONICS | 2012年 / 78卷

关键词：

Self-alignment; Nanowire field-effect transistor; Multi-channel nanowire FET; Voltage tolerance; THIN-FILM TRANSISTORS; GROWTH;

D O I：

10.1016/j.sse.2012.05.058

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Si nanowire field effect transistors (SiNW FETs) with multiple nanowire channels and different gate lengths have been fabricated by using a directed assembly approach combined with a standard photolithographic process. The electrical characteristics of SiNW FETs containing different numbers of nanowire channels were measured and compared. The multi-channel SiNW FETs show excellent performance: small subthreshold slope (approximate to 75 mV/dec), large ON/OFF ratio (approximate to 10(8)), good break-down voltage (>30 V) and good carrier mobility (mu(p) approximate to 100 cm(2) V(-1)s(-1)). These excellent device properties were achieved by using a clean self-alignment process and an improved device structure with Schottky barriers at the source and drain contacts. Such high-performance multi-nanowire FETs are attractive for logic, memory, and sensor applications. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：92 / 96

页数：5

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