InP-Based Planar-Antenna-Integrated Schottky-Barrier Diode for Millimeter- and Sub-Millimeter-Wave Detection

被引：46

作者：

Ito, Hiroshi ^{[1
]}

Nakajima, Fumito ^{[1
]}

Ohno, Tetsuichiro ^{[1
]}

Furuta, Tomofumi ^{[1
]}

Nagatsuma, Tadao ^{[2
,3
]}

Ishibashi, Tadao ^{[4
]}

机构：

[1] NTT Corp, NTT Photon Labs, Kanagawa 2430198, Japan

[2] NTT Corp, NTT Microsyst Integrat Labs, Kanagawa 2430198, Japan

[3] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan

[4] NTT Elect Corp, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 08期

关键词：

Schottky-barrier diode; millimeter-wave; sub-millimeter-wave; detector; planar antenna; quasi-optical module; sensitivity; wireless transmission;

D O I：

10.1143/JJAP.47.6256

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An InP-based Schottky-barrier diode (SBD) is monolithically integrated with a wideband log-periodic toothed antenna for detecting millimeter- and sub-millimeter-waves at frequencies of up to the terahertz (THz) range. A module with a quasi-optical collimation lens fabricated for practical use exhibits sensitivities of 1000 V/W at 300 GHz and 125 V/W at 1.2 THz with good linearity. Near-distance wireless transmission of 5 Gbit/s data with a 240 GHz carrier is also examined using the fabricated SBD module.

引用

页码：6256 / 6261

页数：6

共 35 条

[1] MICROWAVE MIXER AND DETECTOR DIODES [J].