Synthesis, Structure, Thermal and Electrical Behavior of La-Doped Bismuth Titanate Ceramics

被引：2
|
作者：
Sharanappa, Nagbasavanna [1 ]
Madolappa, Shivanand [1 ]
Sagar, Raghavendra [1 ]
Raibagkar, R. L. [1 ]
机构：
[1] Gulbarga Univ, Dept Post Grad Studies & Res Mat Sci, Gulbarga 585106, Karnataka, India
来源：
FERROELECTRICS LETTERS SECTION | 2012年 / 39卷 / 4-6期
关键词：
La-doped BIT; powder X-ray diffraction; dielectric; DC conductivity; TGA-DSC; FATIGUE-FREE; BI4TI3O12; TRANSITION; GROWTH;
D O I：
10.1080/07315171.2012.738597
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this paper, we report the properties of bismuth titanate (Bi4Ti3O12, BIT) based nano powders with variation of La content synthesized by well known conventional solid state reaction method. These BIT based ceramic samples sintered above 1000 degrees C had density in the range of 95 to 98% of the theoretical density. The effect of La-doping on structural, thermal and electrical properties of BIT has been studied. The results of XRD, TGA-DSC showed the presence of La-content which shifts the peaks to higher level. The change of dielectric constant, dc conductivity of BIT ceramics were observed as increase in the La concentration from x = 0 to 0.45.
引用
收藏
页码：81 / 87
页数：7
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