Spin to Charge Interconversion Phenomena in the Interface and Surface States

被引:43
作者
Ando, Yuichiro [1 ]
Shiraishi, Masashi [1 ]
机构
[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan
关键词
FIELD-EFFECT TRANSISTOR; DOPED TOPOLOGICAL INSULATOR; HGTE QUANTUM-WELLS; ROOM-TEMPERATURE; ELECTRICAL DETECTION; FERROMAGNETIC-RESONANCE; ELECTRONIC MEASUREMENT; POLARIZED CURRENTS; ORBIT TORQUE; THIN-FILM;
D O I
10.7566/JPSJ.86.011001
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In 1985, Johnson and Silsbee realized the creation of a spin current in nonmagnetic metals, which inspired a vast number of studies related to the spin current until now. Creation of the spin current has been realized in metals, semiconductors, and insulators to date and has provided a fruitful research field. Spin-dependent conductance and spin torque paved a new way for spintronic application, and highly efficient interconversion between spin information and an industrially used one, such as charge current, light, magnetic moment and heat current, became a central topic. In the early stage, the main field of such interconversion was bulk materials; the focus then gradually shifted to surface and interface states. The properties of surface and interface states became pronounced in nanoscale spintronics devices, and a variety of functions have been realized at the interface between two materials, enabling limitless possibilities for spin functions. This review provides an overview of the recent progress of the spin-charge interconversion in the surface and interface states. We also introduce several spurious effects that should be paid careful attention for quantitative investigations.
引用
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页数:13
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