Investigation of an InGaP GaAs resonant-tunneling transistor (RTT)

被引：2
作者：
Cheng, SY
Tsai, JH
Chang, WL
Pan, WJ
Shie, YH
Liu, WC
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[2] Chien Kuo Coll, Dept Elect Engn, Changhwa, Taiwan
来源：
SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 04期
关键词：
D O I：
10.1016/S0038-1101(98)00331-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new InGaP/GaAs resonant-tunneling transistor (RTT) has been fabricated successfully and demonstrated. A 5-period InGaP/GaAs superlattice is used as a confinement barrier for holes and an RT route for electrons. A transistor action with a common-emitter current gain up to 220 and an offset voltage of 85 mV are obtained. Due to the RT effect within the 5-period superlattice near the emitter-base p-n junction region, the N-shaped negative-differential-resistance (NDR) phenomena are observed at room temperature. Furthermore, the N-shaped NDR is found both in the saturation and forward-active region. The widely operating regime of NDR may provide the potential for practical applications. (C) 1999 Elsevier Science Ltd. All rights reserved.
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页码：755 / 760
页数：6
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