Ammonothermal growth of bulk GaN

被引：57
作者：
Hashimoto, Tadao [1 ,2 ]
Wu, Feng [1 ,2 ]
Speck, James S. [1 ,2 ]
Nakamura, Shuji [1 ,2 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Japan Sci & Technol Agcy, NICP ERATO UCSB Grp, Tokyo, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 17期
关键词：
growth from solutions; single crystal growth; nitrides; semiconducting gallium compounds;
D O I：
10.1016/j.jcrysgro.2008.06.005
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Bulk GaN crystals have been realized by the basic ammonothermal method. Three-dimensional polyhedron-shaped crystals in size of approximately 5 mm and their sliced wafers demonstrated the feasibility of the basic ammonothermal method to produce GaN wafers. Clear crystallographic facets of N face and m planes were observed although Ga face was decorated with angled facets of {10 (1) over bar1} planes. The growth rate and growth nature showed distinct anisotropy. The transmission electron microscopy revealed high quality of microstructure, whereas selective etching and X-ray diffraction revealed multiple grains, which were presumably caused by insufficient structural quality of seed crystals. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：3907 / 3910
页数：4
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