Ammonothermal growth of bulk GaN

被引：57

作者：

Hashimoto, Tadao ^{[1
,2
]}

Wu, Feng ^{[1
,2
]}

Speck, James S. ^{[1
,2
]}

Nakamura, Shuji ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Japan Sci & Technol Agcy, NICP ERATO UCSB Grp, Tokyo, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 17期

关键词：

growth from solutions; single crystal growth; nitrides; semiconducting gallium compounds;

D O I：

10.1016/j.jcrysgro.2008.06.005

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Bulk GaN crystals have been realized by the basic ammonothermal method. Three-dimensional polyhedron-shaped crystals in size of approximately 5 mm and their sliced wafers demonstrated the feasibility of the basic ammonothermal method to produce GaN wafers. Clear crystallographic facets of N face and m planes were observed although Ga face was decorated with angled facets of {10 (1) over bar1} planes. The growth rate and growth nature showed distinct anisotropy. The transmission electron microscopy revealed high quality of microstructure, whereas selective etching and X-ray diffraction revealed multiple grains, which were presumably caused by insufficient structural quality of seed crystals. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：3907 / 3910

页数：4

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