The 3D nanometer device project nextnano: Concepts, methods, results

被引:100
作者
Trellakis, Alex [1 ]
Zibold, Tobias [1 ]
Andlauer, Till [1 ]
Birner, Stefan [1 ]
Smith, R. Kent [1 ]
Morschl, Richard [1 ]
Vogl, Peter [1 ]
机构
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
关键词
Semiconductor devices; TCAD; Quantum; Electronic structure; Carrier transport;
D O I
10.1007/s10825-006-0005-x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
nextnano is a simulation tool that aims at providing global insight into the basic physical properties of realistic three-dimensional mesoscopic semiconductor structures. It focuses on quantum mechanical properties such as the global electronic structure, optical properties, and the effects of electric and magnetic fields for virtually any geometry and combination of semiconducting materials. For the calculation of carrier dynamics, two models are currently implemented that provide results for the limiting cases of highly diffusive or purely ballistic quantum-mechanical transport. In this paper, we present an overview of nextnano's present and future capabilities and discuss some key concepts in the areas of code structure, numerical techniques, and electronic structure principles.
引用
收藏
页码:285 / 289
页数:5
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