A High Power Amplifier At Ka-band

被引：0

作者：

Yang Jiansong ^{[1
]}

Guo Dechun ^{[1
]}

机构：

[1] Beijing Inst Technol, Sch Informat & Elect, Beijing 100081, Peoples R China

来源：

PROCEEDINGS OF 2014 3RD ASIA-PACIFIC CONFERENCE ON ANTENNAS AND PROPAGATION (APCAP 2014) | 2014年

关键词：

GaN; Ka-band; high power amplifiers; Coupler;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we describe the design of a high power amplifier at Ka band. To achieve the output power of more than 30dBm, at first we design a one-stage power amplifier, and then design a two-stage amplifier circuit through the directional coupler, and ultimately achieve 31dBm of output power. The design is based on GaN materials to build a physical model of the HEMT. The S-parameters are extracted by using the HFSS software to build the physical structure of the passive components. At last we get a multi-stage amplifier design through ADS simulation.

引用

页码：1380 / 1383

页数：4

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