Growth and characterization of polar and nonpolar ZnO film grown on sapphire substrates by using atomic layer deposition

被引：23

作者：

Kim, Ki-Wook ^{[1
]}

Son, Hyo-Soo ^{[1
]}

Choi, Nak-Jung ^{[1
]}

Kim, Jihoon ^{[2
]}

Lee, Sung-Nam ^{[1
]}

机构：

[1] Korea Polytech Univ, Dept Nanoopt Engn, Optoelect Mat & Devices Lab, Shihung 429839, Gyeonggi Do, South Korea

[2] Kongju Natl Univ, Div Adv Mat Engn, Cheonan 331717, Chungchungnam D, South Korea

来源：

THIN SOLID FILMS | 2013年 / 546卷

关键词：

ZnO; ALD; nonpolar; semipolar; R-PLANE SAPPHIRE; PULSED-LASER DEPOSITION; PHOTOLUMINESCENCE; EPITAXY;

D O I：

10.1016/j.tsf.2013.03.071

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the electrical and the optical properties of polar and nonpolar ZnO films grown on sapphire substrates with different crystallographic planes. High resolution X-ray results revealed that polar c-plane (0001), nonpolarm-plane (10-10) and a-plane (11-20) ZnO thin films were grown on c-plane, m- and r-sapphire substrates by atomic layer deposition, respectively. Compared with the c-plane ZnO film, nonpolar m-plane and a-plane ZnO films showed smaller surface roughness and anisotropic surface structures. Regardless of ZnO crystal planes, room temperature photoluminescence spectra represented two emissions which consisted of the near bandedge (similar to 380 nm) and the deep level emission (similar to 500 nm). The a-plane ZnO films represented better optical and electrical properties than c-plane ZnO, while m-plane ZnO films exhibited poorer optical and electrical properties than c-plane ZnO. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：114 / 117

页数：4

共 19 条

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