Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition

We have synthesized high-quality gallium nitride (GaN) nanowires by a chemical-vapor-deposition method and studied the electrical transport properties. The electrical measurements on individual GaN nanowires show a pronounced n-type field effect due to nitrogen vacancies in the whole measured temperature ranges. The n-type gate response and the temperature dependence of the current-voltage characteristics could be understood by the band bending at the interface of the metal electrode and GaN wire. The estimated electron mobility from the gate modulation characteristics is about 2.15 cm(2)/V s at room temperature, suggesting the diffusive nature of electron transport in the nanowires. (C) 2002 American Institute of Physics.