Electronic genie: The tangled history of silicon.

被引:0
|
作者
Ceruzzi, PE [1 ]
机构
[1] Smithsonian Inst, Natl Air & Space Museum, Washington, DC 20560 USA
关键词
D O I
10.1086/384492
中图分类号
N09 [自然科学史]; B [哲学、宗教];
学科分类号
01 ; 0101 ; 010108 ; 060207 ; 060305 ; 0712 ;
摘要
引用
收藏
页码:633 / 634
页数:2
相关论文
共 50 条
  • [1] Electronic genie: The tangled history of silicon.
    Hayes, RM
    LIBRARY QUARTERLY, 1999, 69 (03): : 375 - 376
  • [2] Electronic genie: The tangled history of silicon
    Bassett, R
    IEEE ANNALS OF THE HISTORY OF COMPUTING, 1999, 21 (04) : 81 - 82
  • [3] Electronic genie: The tangled history of silicon
    Meindl, JD
    NATURE, 1998, 395 (6702) : 559 - 560
  • [5] The tangled history of silicon in electronics
    Seitz, F
    Einspruch, NG
    SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2, 1998, : 69 - 98
  • [6] ELECTRONIC PROPERTIES OF DANGLING BONDS IN SILICON.
    Kirton, M.J.
    Jaros, M.
    Brand, S.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 116 B&C (1-3): : 79 - 84
  • [7] TRANSPORT AND THE ELECTRONIC STRUCTURE OF HYDROGENATED AMORPHOUS SILICON.
    Silver, M.
    Adler, D.
    Shaw, M.P.
    Cannella, V.
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1986, 53 (4 pt 2):
  • [8] CLUSTER CALCULATION OF THE ELECTRONIC STRUCTURE OF BORON IMPURITIES IN SILICON.
    Bunin, M.A.
    Matveev, Yu.A.
    Petrov, N.A.
    Sukhetskii, Yu.V.
    1600, (17):
  • [9] INFLUENCE OF ANNEALING ON THE STRUCTURAL AND ELECTRONIC PROPERTIES OF SHAPED SILICON.
    Abrosimov, N.V.
    Bazhenov, A.V.
    Goncharov, V.A.
    Erofeeva, S.A.
    Bulletin of the Academy of Sciences of the U.S.S.R. Physical series, 1982, 47 (02): : 139 - 143
  • [10] PRELIMINARY STUDY ON THE ELECTRONIC STRUCTURE OF HYDROGENATED AND FLUORINATED AMORPHOUS SILICON.
    Jiang Ping
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1983, 4 (02): : 133 - 141