Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser

被引：93

作者：

Tachibana, K

Someya, T

Arakawa, Y

Werner, R

Forchel, A

机构：

[1] Univ Tokyo, Inst Ind Sci, Adv Sci & Technol Res Ctr, Minato Ku, Tokyo 1068558, Japan

[2] Univ Wurzburg, Lehrstuhl Tech Phys, D-97074 Wurzburg, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 17期

关键词：

D O I：

10.1063/1.125092

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated laser action of an InGaN self-assembled quantum dot (QD) laser by optical pumping. We have grown the laser structure with the In0.2Ga0.8N QDs embedded in the active layer, using atmospheric-pressure metalorganic chemical vapor deposition. A clear threshold was observed in the relation between the excitation and emission intensity at room temperature. Above the threshold, the width of the emission peak was below 0.1 nm (resolution limit), and the emission was strongly polarized in the transverse electric mode. These results indicate that lasing oscillation in the InGaN self-assembled QD laser has been achieved at room temperature. (C) 1999 American Institute of Physics. [S0003-6951(99)03643-8].

引用

收藏

页码：2605 / 2607

页数：3

相关论文

共 16 条

[1] Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters [J].

Akasaki, I ;

Amano, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (9A) :5393-5408

[2] Shortest wavelength semiconductor laser diode [J].

Akasaki, I ;

Sota, S ;

Sakai, H ;

Tanaka, T ;

Koike, M ;

Amano, H .

ELECTRONICS LETTERS, 1996, 32 (12) :1105-1106

[3] Absorption of InGaN single quantum wells determined by photothermal deflection spectroscopy [J].

Ambacher, O ;

Brunner, D ;

Dimitrov, R ;

Stutzmann, M ;

Sohmer, A ;

Scholz, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3A) :745-752

[4] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[5] Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN [J].

Daudin, B ;

Widmann, F ;

Feuillet, G ;

Samson, Y ;

Arlery, M ;

Rouviere, JL .

PHYSICAL REVIEW B, 1997, 56 (12) :R7069-R7072

[6] Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces [J].

Hirayama, H ;

Tanaka, S ;

Ramvall, P ;

Aoyagi, Y .

APPLIED PHYSICS LETTERS, 1998, 72 (14) :1736-1738

[7] Violet InGaN/GaN/AIGaN-based laser diodes operable at 50°C with a fundamental transverse mode [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y ;

Kozaki, T ;

Umemoto, H ;

Sano, M ;

Mukai, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (3A) :L226-L229

[8]

Nakamura S., 1997, BLUE LASER DIODE GAN

[9]

NAKAMURA S, 1996, JPN J APPL PHYS PT 1, V35, P74

[10] Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laser [J].

Saito, H ;

Nishi, K ;

Ogura, I ;

Sugou, S ;

Sugimoto, Y .

APPLIED PHYSICS LETTERS, 1996, 69 (21) :3140-3142