Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates

被引：2

作者：

Nguyen Thanh, T. ^{[1
]}

Robert, C. ^{[1
]}

Giudicelli, E. ^{[1
]}

Letoublon, A. ^{[1
]}

Cornet, C. ^{[1
]}

Ponchet, A. ^{[2
]}

Rohel, T. ^{[1
]}

Balocchi, A. ^{[3
]}

Micha, J. S. ^{[4
]}

Perrin, M. ^{[1
]}

Loualiche, S. ^{[1
]}

Marie, X. ^{[3
]}

Bertru, N. ^{[1
]}

Durand, O. ^{[1
]}

Le Corre, A. ^{[1
]}

机构：

[1] Univ Europeenne Bretagne, INSA, FOTON OHM, UMR 6082, F-35708 Rennes, France

[2] CEMES, UPR CNRS 8011, F-31055 Toulouse, France

[3] Univ Toulouse, INSA CNRS UPS, LPCNO, F-31077 Toulouse, France

[4] UMR SPrAM 5819 CNRS CEA UJF, INAC, F-38054 Grenoble, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 378卷

关键词：

Micro-twins; Planar defects; Synchrotron; X-ray diffraction; Molecular Beam Epitaxy; Semiconducting III-V materials; X-RAY-SCATTERING; EPITAXY; SI; SEMICONDUCTORS; HETEROEPITAXY; EVOLUTION; MBE;

D O I：

10.1016/j.jcrysgro.2012.11.046

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the quantitative study of microtwins (MT) defects in the GaP/Si(0 0 1) thin film grown by Molecular Beam Epitaxy and the optical properties of GaAsP(N)/GaP(N) quantum wells grown on top of the Gap/Si pseudo-substrates. A 780 nm photoluminescence at room temperature from the GaAsPN quantum wells is measured on silicon. Time-resolved photoluminescence has been performed and evidences the influence of non-radiative defects originated from the GaP/Si interface. The structural defects such as MT are quantitatively analyzed by synchrotron X-ray diffraction (XRD) combined with transmission electron microscopy (TEM) analyses. We show that the XRD measurements are in good agreement with TEM observation and reveal a strong contribution of MT in the [1 1 1] direction. The MT density appears to be directly correlated with the growth temperature. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：25 / 28

页数：4

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