Broadband tunable InAs/InP quantum dot external-cavity laser emitting around 1.55 μm

被引：18

作者：

Gao, F. ^{[1
]}

Luo, S. ^{[1
]}

Ji, H. M. ^{[1
]}

Yang, X. G. ^{[1
]}

Liang, P. ^{[1
]}

Yang, T. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

OPTICS EXPRESS | 2015年 / 23卷 / 14期

基金：

中国国家自然科学基金;

关键词：

CHEMICAL-VAPOR-DEPOSITION; TUNING RANGE; DIODE-LASER; ROOM-TEMPERATURE; LONG-WAVELENGTH; NM; SYSTEM; GROWTH;

D O I：

10.1364/OE.23.018493

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report a broadband tunable external-cavity laser based on InAs/InP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. It is found that high AsH3 flow during the interruption after QD deposition greatly promotes QD ripening, which improves the optical gain of QD active medium in lower energy states. Combined with anti-reflection/high-reflection facet coatings, a broadly tunable InAs/InP QD external-cavity laser was realized with a tuning range of 140.4 nm across wavelengths from 1436.6 nm to 1577 nm at a maximum output power of 6 mW. (C) 2015 Optical Society of America

引用

页码：18493 / 18500

页数：8

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