Tailoring the electron-phonon interaction with metallic plasmonic structures

被引：2

作者：

Wu, X. ^{[1
]}

Kong, J. ^{[1
]}

Protik, N. H. ^{[1
]}

Broido, D. ^{[1
]}

Kempa, K. ^{[1
]}

机构：

[1] Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA

来源：

MATERIALS TODAY PHYSICS | 2019年 / 8卷

关键词：

Electron-phonon interaction; Metamaterials; Mobility; Plasmonics; Semiconductors; Transport; NUMERICAL-SOLUTION; SCATTERING; MOBILITY;

D O I：

10.1016/j.mtphys.2019.02.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The interaction between electrons and phonons governs the intrinsic electrical resistance in semiconductors. We show that large reductions in the strength of the interaction between electrons and phonons in polar semiconductors can be achieved by exploiting strong 'off-resonance' screening from two-dimensional plasmonic arrays embedded in a nearby insulating layer. By judicious design of the plasmonic layers, remarkably large enhancements of the carrier mobilities are predicted. Examples for GaN-, MoS2-, and GaAs-based structures are given. Experimental verification of these predicted behaviors could lead to significant improvements in the performance of next-generation electronic devices. (C) 2019 Elsevier Ltd. All rights reserved.

引用

页码：86 / 91

页数：6

共 20 条

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