Effect of carbon on lattice strain and hole mobility in Si1-xGex alloys

被引：4

作者：

Kar, GS ^{[1
]}

Dhar, A

Bera, LK

Ray, SK

John, S

Banerjee, SK

机构：

[1] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India

[2] Texas Instruments Inc, Mixed Signal Proc Grp, Dallas, TX USA

[3] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2002年 / 13卷 / 01期

关键词：

D O I：

10.1023/A:1013103232208

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pseudomorphic Si1-xGex and partially strain compensated Si1-x-yGexCy layers with different Ge and C fractions have been grown at 500 degreesC by ultra high vacuum chemical vapor deposition on Si (100) substrates. The degree of strain compensation of the layers has been investigated by high resolution X-ray diffraction and simple application of the linear elasticity theory. The surface morphology of the layers has been characterized by atomic force microscopy. The dependence of Si-Si Raman mode vibrations on strain and composition of binary and ternary alloys have been explained with experimental and theoretically calculated results. The Hall hole mobility is found to increase with decreasing compressive strain or effective Ge content in the layer throughout the temperature range of 120-300 K. (C) 2002 Kluwer Academic Publishers.

引用

页码：49 / 55

页数：7

共 34 条

[1] RAMAN-SPECTRA OF C-SI1-XGEX ALLOYS [J].

ALONSO, MI ;

WINER, K .

PHYSICAL REVIEW B, 1989, 39 (14) :10056-10062

[2] Lattice parameter in Si1-yCy epilayers:: Deviation from Vegard's rule [J].

Berti, M ;

De Salvador, D ;

Drigo, AV ;

Romanato, F ;

Stangl, J ;

Zerlauth, S ;

Schaffer, F ;

Bauer, G .

APPLIED PHYSICS LETTERS, 1998, 72 (13) :1602-1604

[3] Effect of carbon on the valence band offset of Si1-x-yGexCy/Si heterojunctions [J].

Chang, CL ;

StAmour, A ;

Sturm, JC .

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :257-260

[4] Direct optical measurement of the valence band offset of p+Si1-x-yGexCy/p-Si(100) by heterojunction internal photoemission [J].

Chang, CL ;

Rokhinson, LP ;

Sturm, JC .

APPLIED PHYSICS LETTERS, 1998, 73 (24) :3568-3570

[5] Structural characterization of rapid thermal oxidized Si1-x-yGexCy alloy films grown by rapid thermal chemical vapor deposition [J].

Choi, WK ;

Chen, JH ;

Bera, LK ;

Feng, W ;

Pey, KL ;

Mi, J ;

Yang, CY ;

Ramam, A ;

Chua, SJ ;

Pan, JS ;

Wee, ATS ;

Liu, R .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :192-197

[6] Surface smoothing induced by epitaxial Si capping of rough and strained Ge or Si1-xGex morphologies:: a RHEED and TEM study [J].

Dentel, D ;

Bischoff, JL ;

Kubler, L ;

Werckmann, J ;

Romeo, M .

JOURNAL OF CRYSTAL GROWTH, 1998, 191 (04) :697-710

[7] LATTICE DISTORTION IN A STRAIN-COMPENSATED SI1-X-YGEXCY LAYER ON SILICON [J].

DIETRICH, B ;

OSTEN, HJ ;

RUCKER, H ;

METHFESSEL, M ;

ZAUMSEIL, P .

PHYSICAL REVIEW B, 1994, 49 (24) :17185-17190

[8] GROWTH AND STRAIN COMPENSATION EFFECTS IN THE TERNARY SI1-X-YGEXCY ALLOY SYSTEM [J].

EBERL, K ;

IYER, SS ;

ZOLLNER, S ;

TSANG, JC ;

LEGOUES, FK .

APPLIED PHYSICS LETTERS, 1992, 60 (24) :3033-3035

[9] X-RAY ROCKING CURVE MEASUREMENT OF COMPOSITION AND STRAIN IN SI-GE BUFFER LAYERS GROWN ON SI SUBSTRATES [J].

FATEMI, M ;

STAHLBUSH, RE .

APPLIED PHYSICS LETTERS, 1991, 58 (08) :825-827

[10] Electrical properties of lightly doped p-type silicon-germanium single crystals [J].

Gaworzewski, P ;

Tittelbach-Helmrich, K ;

Penner, U ;

Abrosimov, NV .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (10) :5258-5263

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