Photothermal Switching Based on Silicon Mach-Zehnder Interferometer Integrated With Light Absorber

被引：14

作者：

Gong, Hanmo ^{[1
]}

Chen, Xi ^{[2
]}

Qu, Yurui ^{[1
]}

Li, Qiang ^{[1
]}

Yan, Min ^{[2
]}

Qiu, Min ^{[1
]}

机构：

[1] Zhejiang Univ, Coll Opt Engn, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Zhejiang, Peoples R China

[2] KTH Royal Inst Technol, Sch Informat & Commun Technol, S-16440 Kista, Sweden

来源：

IEEE PHOTONICS JOURNAL | 2016年 / 8卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Integrated nanophotonic systems; silicon nanophotonics; waveguides; fabrication and charaterization; photothermal effect; THERMOOPTICAL SWITCH; OPTICAL MODULATOR; WAVE-GUIDES;

D O I：

10.1109/JPHOT.2016.2550319

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an all-optical switch based on photothermal effects in a silicon Mach-Zehnder interferometer (MZI) integrated with a light absorber. The metal-insulator-metal light absorber located near the longer arm of the asymmetric MZI efficiently converts infrared light to heat. Pumped by a continuous-wave 1064-nm laser, the spectral transmittance of the fully etched strip waveguide (half-etched rib waveguide) MZI can be tuned with an efficiency of 38 pm/mW (98.5 pm/mW). Dynamic switching experiments show that the rise/fall time constant of the output probe light is 11.45/10.98 mu s (8.25/7.13 mu s) for the fully etched (half-etched) MZI.

引用

页数：10

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