Germanium tin: silicon photonics toward the mid-infrared [Invited]

被引：125

作者：

Kasper, E. ^{[1
]}

Kittler, M. ^{[2
]}

Oehme, M. ^{[1
]}

Arguirov, T. ^{[2
]}

机构：

[1] Univ Stuttgart, Inst Semicond Engn, D-70174 Stuttgart, Germany

[2] Brandenburg Tech Univ Cottbus, Joint Lab IHP BTU, Cottbus, Germany

来源：

PHOTONICS RESEARCH | 2013年 / 1卷 / 02期

关键词：

MOLECULAR-BEAM EPITAXY; GE1-XSNX ALLOYS; ALPHA-SN; GROWTH; SI; ELECTROLUMINESCENCE; STABILITY; DIODES; LAYERS; FILMS;

D O I：

10.1364/PRJ.1.000069

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Germanium tin (GeSn) is a group IV semiconductor with a direct band-to-band transition below 0.8 eV. Nonequilibrium GeSn alloys up to 20% Sn content were realized with low temperature (160 degrees C) molecular beam epitaxy. Photodetectors and light emitting diodes (LEDs) were realized from in situ doped pin junctions in GeSn on Ge virtual substrates. The detection wavelength for infrared radiation was extended to 2 mu m with clear potential for further extension into the mid-infrared. GeSn LEDs with Sn content of up to 4% exhibit light emission from the direct band transition, although GeSn with low Sn content is an indirect semiconductor. The photon emission energies span the region between 0.81 and 0.65 eV. Optical characterization techniques such as ellipsometry, in situ reflectometry, and Raman spectroscopy were used to monitor the Sn incorporation in GeSn epitaxy. (C) 2013 Chinese Laser Press.

引用

页码：69 / 76

页数：8

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