Spin-orbit torque-induced magnetization switching in epitaxial Au/Fe4N bilayer films

被引：14

作者：

Li, Hongwei ^{[1
]}

Wang, Gaili ^{[1
]}

Li, Dan ^{[1
]}

Hu, Ping ^{[1
]}

Zhou, Wenqi ^{[1
]}

Ma, Xingyuan ^{[1
]}

Dang, Shuai ^{[1
]}

Kang, Songdan ^{[1
]}

Dai, Tian ^{[1
]}

Yu, Fengmei ^{[2
]}

Zhou, Xiang ^{[3
]}

Wu, Shuxiang ^{[1
]}

Li, Shuwei ^{[1
]}

机构：

[1] Sun Yat Sen Univ, Sch Phys, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

[2] Zhongkai Univ Agr & Engn, Automat Coll, Guangzhou 510225, Guangdong, Peoples R China

[3] Sun Yat Sen Univ, Sch Phys & Astron, Zhuhai Campus, Zhuhai 519082, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2019年 / 114卷 / 09期

基金：

中国国家自然科学基金;

关键词：

DRIVEN;

D O I：

10.1063/1.5078395

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Au/Fe4N bilayer films have been grown by the plasma-assisted molecular beam epitaxy system. After an extraordinarily small charge current is applied to the samples, magnetization of the Fe4N layer was reversed by spin-orbit torque. Analyses indicate that the magnetization reversal is realized via domain wall motion and it was confirmed by magnetic force microscopy measurements. By comparing the transport properties of the Au/Fe4N bilayer film with those of control samples before and after using a pulse current to stimulate the films, contributions of the thermal effect and spin transfer torque induced by current that flows in the Fe4N layer to the magnetization switching were analyzed and determined to be negligible. Kerr signals were observed simultaneously with applying a charge current to the samples at zero magnetic field, which could be explained by the spin Hall effect of the Au layer. Published under license by AIP Publishing.

引用

页数：5

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