Interfacial-layer-free growth of yttrium oxide on germanium by understanding initial surface reactions

被引：7

作者：

Liu, Z. Q. ^{[1
]}

Chim, W. K. ^{[1
]}

Chiam, S. Y. ^{[2
]}

Pan, J. S. ^{[2
]}

Chun, S. R. ^{[3
]}

Liu, Q. ^{[4
]}

Ng, C. M. ^{[5
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[2] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore

[3] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[4] Nanyang Technol Univ, Temasek Labs, Singapore 639798, Singapore

[5] GLOBALFOUNDRIES Singapore Pte Ltd, Singapore 738406, Singapore

来源：

SURFACE SCIENCE | 2012年 / 606卷 / 21-22期

关键词：

Yttrium oxide; Germanium; Interfacial layer; X-ray photoelectron spectroscopy; Yttrium; Yttrium germanate; Yttrium germanide; Oxidation; FILMS; Y2O3; SI(100); SI(001); SIO2;

D O I：

10.1016/j.susc.2012.07.007

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this study, we investigate the surface and interfacial reactions involved in the growth of yttrium oxide through the oxidation of yttrium metal on germanium. Our combined understanding of the oxidation and interfacial reactions allows us to introduce a layer-by-layer method to grow an interfacial-layer-free yttrium oxide on germanium at room temperature, which has previously proven to be difficult During initial growth, we show evidence that yttrium germanide provides the lowest kinetic pathway in the formation of the yttrium germanate interfacial layer and explain how this pathway can be avoided using our layer-by-layer method. This method can possibly be used to achieve interfacial-layer-free growth for other metal oxides on semiconductors. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：1638 / 1642

页数：5

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