Comparison of different concepts of InAs quantum dot growth on GaAs for 1.3-μm-range lasers

被引：2

作者：

Sadofyev, Yu. G. ^{[1
]}

机构：

[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia

来源：

SEMICONDUCTORS | 2012年 / 46卷 / 11期

关键词：

PARAMETERS; DENSITY; ARRAYS;

D O I：

10.1134/S106378261211019X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The DWELL (dots-in-a-well), DUWELL (dots-under-the-well), and GC-SRL (gradient-composition-strain-reducing-layer) concepts of InAs quantum dot epitaxial growth under identical conditions have been compared. The laser structures are designed for operation near 1.3 mu m. An improved procedure is proposed for estimating the InAs growth rate. The dependence of the photoluminescence peak's spectral position and intensity on the structure type and epitaxy conditions has been studied. A 10-stack DUWELL ridge waveguide laser diode with ground-state lasing at room temperature has been demonstrated.

引用

页码：1367 / 1371

页数：5

共 14 条

[1] Highest density 1.3 μm InAs quantum dots covered with gradient composition InGaAs strain reduced layer grown with an As2 source using molecular beam epitaxy [J].

Amano, T ;

Sugaya, T ;

Komori, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (12-15) :L432-L434

[2] Realization of 1.3 μm InAs quantum dots with high-density, uniformity, and quality [J].

Amano, Takeru ;

Sugaya, Takeyoshi ;

Yamauchi, Shohgo ;

Komori, Kazuhiro .

JOURNAL OF CRYSTAL GROWTH, 2006, 295 (02) :162-165

[3] Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode [J].

Cherkashin, NA ;

Maksimov, MV ;

Makarov, AG ;

Shchukin, VA ;

Ustinov, VM ;

Lukovskaya, NV ;

Musikhin, YG ;

Cirlin, GE ;

Bert, NA ;

Alferov, ZI ;

Ledentsov, NN ;

Bimberg, D .

SEMICONDUCTORS, 2003, 37 (07) :861-865

[4] Effect of the growth parameters on the structure and morphology of InAs/InGaAs/GraAs DWELL quantum [J].

Gutiérrez, M ;

Hopkinson, M ;

Liu, HY ;

Herrera, M ;

González, D ;

García, R .

JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) :151-155

[5]

Ledentsov N. N, 1999, QUANTUM DOT HETEROST

[6] Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well [J].

Liu, GT ;

Stintz, A ;

Li, H ;

Malloy, KJ ;

Lester, LF .

ELECTRONICS LETTERS, 1999, 35 (14) :1163-1165

[7] Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 μm wavelength range [J].

Maleev, NA ;

Zhukov, AE ;

Kovsh, AR ;

Mikhrin, SS ;

Ustinov, VM ;

Bedarev, DA ;

Volovik, BV ;

Krestnikov, IL ;

Kayander, IN ;

Odnoblyudov, VA ;

Suvorova, AA ;

Tsatsul'nikov, AF ;

Shernyakov, YM ;

Ledentsov, NN ;

Kop'ev, PS ;

Alferov, ZI ;

Bimberg, D .

SEMICONDUCTORS, 2000, 34 (05) :594-597

[8] Temperature-dependent photoluminescence study of 1.3 μm undoped InAs/InGaAs/GaAs quantum dots [J].

Ngo, C. Y. ;

Yoon, S. F. ;

Lim, D. R. ;

Wong, Vincent ;

Chua, S. J. .

APPLIED PHYSICS LETTERS, 2008, 93 (04)

[9]

Shchukin VA, 2000, MATER RES SOC SYMP P, V583, P23

[10] Photoluminescence variation in dot-in-a-well structures with different InAs quantum dot densities [J].

Torchynska, T. V. ;

Velazquez Lozada, E. ;

Casas Espinola, J. L. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (02) :919-922

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