Growth and characterization of high strain InGaAs/GaAs quantum well by molecular beam epitaxy

被引：1

作者：

Shan, Rui ^{[1
]}

Liu, Yu ^{[1
]}

Guo, Jie ^{[1
]}

Wang, Guowei ^{[2
]}

Xu, Yingqiang ^{[2
]}

机构：

[1] Yunnan Normal Univ, Sch Phys & Elect Informat, Kunming 650500, Yunnan, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

INFRARED TECHNOLOGY AND APPLICATIONS, AND ROBOT SENSING AND ADVANCED CONTROL | 2016年 / 10157卷

关键词：

infrared photodetectors; InGaAs/GaAs QW; high strain; MBE; photoluminescence; LOW-TEMPERATURE GROWTH;

D O I：

10.1117/12.2247398

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High indium composition InxGa1-xAs/GaAs quantum wells (x>0.4) in which the well width reached to 7 nm without relaxing were grown on (100) GaAs substrates by MBE. The good crystal quality and optical properties of the high strained InGaAs/GaAs QW were obtained by controlling quasi-2D growth model and optimizing the growth condition including the growth temperature, growth rate, and V/III BEP ratio. Photoluminescence (PL) showed that the cutoff wavelength was about 1.3 mu m at room temperature with narrow full width at half maximum below 30meV. Dilute nitrogen and high In composition InGaAsN/GaAs QW extended wavelength infrared photodetectors at 1. 3 and 1.55 mu m were also realized.

引用

页数：7

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