Silicon carbide photodiodes: Schottky and PINIP structures

被引：4

作者：

Cabrita, A ^{[1
]}

Pereira, L

Brida, D

Lopes, A

Marques, A

Ferreira, I

Fortunato, E

Martins, R

机构：

[1] Univ Nova Lisboa, Dept Mat Sci, Fac Sci & Technol, P-2829516 Caparica, Portugal

[2] Univ Nova Lisboa, CEMOP, P-2829516 Caparica, Portugal

来源：

APPLIED SURFACE SCIENCE | 2001年 / 184卷 / 1-4期

关键词：

amorphous silicon carbide; density of states; Schottky junctions; colour selection;

D O I：

10.1016/S0169-4332(01)00531-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This work deals with the study of the role of intra-gap density of states and films composition on the colour selection of the collection spectrum of glass/ITO/a-Si-x:C1-x:H/A1 Schottky photodiodes produced in a conventional plasma-enhanced chemical vapour deposition (PECVD) system using as gas sources silane and a controlled mixtures of silane and methane. To do so, properties of the films were investigated, especially the one concerning the determination of the valence controllability C of the films produced and the density of bulk states. Besides that, a PINIP device was also produced, using the a-Si-x:C1-x:layer that lead to the best Schottky diode performances. (C) 2001 Elsevier Science BN All rights reserved.

引用

页码：437 / 442

页数：6

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