Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes

被引：37

作者：

Wang, Liancheng ^{[1
]}

Zhang, Yiyun ^{[1
]}

Li, Xiao ^{[2
]}

Liu, Zhiqiang ^{[1
]}

Guo, Enqing ^{[1
]}

Yi, Xiaoyan ^{[1
]}

Wang, Junxi ^{[1
]}

Zhu, Hongwei ^{[2
,3
]}

Wang, Guohong ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China

[2] Tsinghua Univ, Dept Mech Engn, Key Lab Adv Mfg Mat Proc Technol, Beijing 100084, Peoples R China

[3] Tsinghua Univ, CNMM, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 06期

基金：

中国国家自然科学基金;

关键词：

OUTPUT POWER;

D O I：

10.1063/1.4742892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN-based vertical structure light emitting diodes (VLEDs) with multi-layer graphene transparent electrodes with higher optical output have been fabricated and tested. High temperature annealing introduced inter-diffusion of metal atoms and Ga atoms and generated the partially sandwiched graphene structure, which contributed to the performance improvement of VLEDs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4742892]

引用

页数：4

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