Present status and future prospects of LEEPL

被引：5

作者：

Utsumi, Takao ^{[1
]}

机构：

[1] Nanolith LLC, Chiyoda Ku, Tokyo 1020075, Japan

来源：

MICROELECTRONIC ENGINEERING | 2006年 / 83卷 / 4-9期

关键词：

NGL; low energy e-beam lithography; proximity; low power; high throughput;

D O I：

10.1016/j.mee.2006.01.269

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Intensive efforts to develop LEEPL tools and to build the infrastructure supporting LEEPL technology have been made since the concept of LEEPL was first published in 1999. As a result, LEEPL has been recently gaining recognition as a potential solution for future lithography in semiconductor industry. Here, LEEPL's present status and future prospects are presented on the basis of these efforts. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：738 / 748

页数：11