Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating

被引：3

作者：

Abe, Yusuke ^{[1
]}

Kubota, Shuji ^{[1
]}

Sakuraba, Masao ^{[1
]}

Murota, Junichi ^{[2
]}

Sato, Shigeo ^{[1
]}

机构：

[1] Tohoku Univ, Lab Nanoelect & Spintron, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Res Inst Elect Commun, Sendai, Miyagi 980, Japan

来源：

ULSI PROCESS INTEGRATION 8 | 2013年 / 58卷 / 09期

基金：

日本学术振兴会;

关键词：

CHEMICAL-VAPOR-DEPOSITION;

D O I：

10.1149/05809.0223ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

By using low-energy electron-cyclotron-resonance (ECR) Ar plasma chemical vapor deposition (CVD), heavily B-doped Si and Ge films can be grown epitaxially on Si(100) even without substrate heating. It was also clarified that high carrier concentration above 10(18) cm(-3) in Si can be obtained by low-temperature heat treatment at as low as 200-300 degrees C. In the case of B-doped Ge on Si(100), by introducing an 1 nm-thick undoped epitaxial Ge buffer layer, crystallinity and electrical resistivity can be improved.

引用

页码：223 / 228

页数：6

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