Titration of submonolayer Au growth on Si(111)

被引:28
作者
Kautz, J. [1 ]
Copel, M. W. [2 ]
Gordon, M. S. [2 ]
Tromp, R. M. [1 ,2 ]
van der Molen, S. J. [1 ]
机构
[1] Leiden Univ, Kamerlingh Onnes Lab, NL-2300 RA Leiden, Netherlands
[2] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
关键词
VICINAL SI(111); ELECTRON-MICROSCOPY; ATOMIC-STRUCTURE; SURFACE; RECONSTRUCTION; DIFFRACTION; SYSTEM;
D O I
10.1103/PhysRevB.89.035416
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study and analyze the growth of submonolayers of Au on Si(111) by a complementary set of surface techniques. Specifically, we focus on the 5 x 2 and the alpha root 3 x root 3 structures. We determine the gold coverage of these structures as a function of temperature by means of low energy electron diffraction (LEED) and low energy electron microscopy (LEEM). These results are independently calibrated by ex-situ ion scattering experiments. This allows us to present a phase diagram for this system. Remarkably, for all temperatures considered (8201040 K), we find a coverage for the 5 x 2 phase that is significantly (approximate to 10%) higher than the value of 0.6 monolayers which is assumed in the latest structural models. Therefore, a further refinement of the present picture of the quasi-one-dimensional 5 x 2 structure is required.
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页数:6
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