The effect of strain on the formation of dislocations at the SiGe/Si interface

被引：63
作者：
LeGoues, FK
机构：
[1] IBM CORP,UTIL MKT UNIT,YORKTOWN HTS,NY 10598
[2] IBM CORP,MICROSTRUCT MAT GRP,YORKTOWN HTS,NY 10598
来源：
MRS BULLETIN | 1996年 / 21卷 / 04期
关键词：
D O I：
10.1557/S0883769400035326
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：38 / 44
页数：7
相关论文
共 27 条
[1]   DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J].
ABRAHAMS, MS ;
WEISBERG, LR ;
BUIOCCHI, CJ ;
BLANC, J .
JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) :223-&
[2]   RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J].
DODSON, BW ;
TSAO, JY .
APPLIED PHYSICS LETTERS, 1987, 51 (17) :1325-1327
[3]   DISLOCATION NUCLEATION NEAR THE CRITICAL THICKNESS IN GESI/SI STRAINED LAYERS [J].
EAGLESHAM, DJ ;
KVAM, EP ;
MAHER, DM ;
HUMPHREYS, CJ ;
BEAN, JC .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1989, 59 (05) :1059-1073
[4]   THE EFFECT OF SUBSTRATE GROWTH AREA ON MISFIT AND THREADING DISLOCATION DENSITIES IN MISMATCHED HETEROSTRUCTURES [J].
FITZGERALD, EA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :782-788
[5]  
HAMMAR M, IN PRESS SURF SCI
[6]  
HARAME D, 1995, INT EL DEV M IEDM 95
[7]   ELECTRON-TRANSPORT PROPERTIES OF SI/SIGE HETEROSTRUCTURES - MEASUREMENTS AND DEVICE IMPLICATIONS [J].
ISMAIL, K ;
NELSON, SF ;
CHU, JO ;
MEYERSON, BS .
APPLIED PHYSICS LETTERS, 1993, 63 (05) :660-662
[8]   EXTREMELY HIGH-ELECTRON-MOBILITY IN SI/SIGE MODULATION-DOPED HETEROSTRUCTURES [J].
ISMAIL, K ;
ARAFA, M ;
SAENGER, KL ;
CHU, JO ;
MEYERSON, BS .
APPLIED PHYSICS LETTERS, 1995, 66 (09) :1077-1079
[9]  
ISMAIL K, 1995, INT EL DEV M IEDM 95
[10]   DISLOCATION INJECTION IN STRAINED MULTILAYER STRUCTURES [J].
KAMAT, SV ;
HIRTH, JP .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (11) :6844-6850
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