Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray diffraction and photoluminescence

被引：6

作者：

Liu, Q ^{[1
]}

Prost, W ^{[1
]}

Tegude, FJ ^{[1
]}

机构：

[1] GERHARD MERCATOR UNIV GH DUISBURG,DEPT SOLID STATE ELECT,D-47057 DUISBURG,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 44卷 / 1-3期

关键词：

ordering; photoluminescence; X-ray diffraction;

D O I：

10.1016/S0921-5107(96)01802-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ga0.51In0.49P grown by metal-organic vapor-phase epitaxy exhibits a growth temperature dependent ordering effect. High resolution X-ray diffraction analysis on different lattice planes of Ga0.51In0.49P samples grown at various temperatures from 600 to 730 degrees C results in the following interpretation: (i) the size of ordered domains continuously enlarges with increasing growth temperature, whereas (ii) the degree of ordering is maximum at about 660-680 degrees C. This result has been proven by transmission electron microscopy. Photoluminescence in Ga0.51In0.49P exhibits a strong dependence of emission energy on excitation intensity (blue-shift). The influence of sample growth temperature on the slope of the PL peak blue-shift is correlated to the size of ordered domains and the degree of ordering in ordered domains. (C) 1997 Elsevier Science S.A.

引用

页码：91 / 95

页数：5

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