Measurement of Anisotropic Biaxial Stresses in Si1-xGex/Si Mesa Structures by Oil-Immersion Raman Spectroscopy

被引：4

作者：

Kosemura, Daisuke ^{[1
]}

Tomita, Motohiro ^{[1
,3
]}

Usuda, Koji ^{[2
]}

Tezuka, Tsutomu ^{[2
]}

Ogura, Atsushi ^{[1
]}

机构：

[1] Meiji Univ, Sch Sci & Technol, Kawasaki, Kanagawa 2148571, Japan

[2] AIST, Collaborat Res Team Green Nanoelect Ctr, Tsukuba, Ibaraki 3058569, Japan

[3] Japan Soc Promot Sci, Chiyoda Ku, Tokyo 1028472, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 04期

基金：

日本科学技术振兴机构; 日本学术振兴会;

关键词：

STRAIN; SILICON; GE; SI; PARAMETERS; SCATTERING;

D O I：

10.7567/JJAP.52.04CA05

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Anisotropic biaxial stress states in Si1-xGex/Si mesa structures were evaluated by oil-immersion Raman spectroscopy. Using a high-numerical-aperture lens, the electrical field component perpendicular to the surface, i.e., z-polarization, can be obtained. The z-polarization enables the excitation of the forbidden optical phonon mode, i.e., the transverse optical (TO) phonon mode, even under the backscattering geometry from (001)-oriented diamond-type crystals. The anisotropic biaxial stress evaluation of Si1-xGex was considered difficult compared with that of Si, because many unknown parameters exist for Si1-xGex, e. g., phonon deformation potentials (PDPs), the Ge concentration x, and the factor of Raman shift on x. In this study, PDPs and the Ge concentration in Si1-xGex were investigated in detail. As a result, using precise PDPs and x, a clear dependence of anisotropic biaxial stress states in Si1-xGex on the mesa structure shape was observed. (C) 2013 The Japan Society of Applied Physics

引用

页数：5

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