The enhancement of ZnO nanowalls photoconductivity induced by CdS nanoparticle modification

被引：64

作者：

Fang, F. ^{[1
,2
]}

Zhao, D. X. ^{[1
]}

Li, B. H. ^{[1
]}

Zhang, Z. Z. ^{[1
]}

Zhang, J. Y. ^{[1
]}

Shen, D. Z. ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 23期

基金：

中国国家自然科学基金;

关键词：

cadmium compounds; III-VI semiconductors; II-VI semiconductors; nanostructured materials; passivation; photoconductivity; photoelectricity; surface states; wide band gap semiconductors; zinc compounds;

D O I：

10.1063/1.3045952

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

10 nm sized hexagonal CdS nanoparticles were decorated on the surface of well-aligned ZnO nanowall through a facile hydrothermal approach. The effects of CdS-cap layer on the optical and photoelectrical properties of ZnO nanowalls have been studied. It was found the CdS acted not only as a passivation layer to suppress the detrimental surface states of ZnO nanowalls, which reduced the deep-level emissions, but also as an interfacial carrier transport layer to reduce the probability of carrier recombination. Due to this effect a significant enhancement in ultraviolet photoconductivity of ZnO nanowalls was observed by the surface modification with CdS nanoparticles.

引用

页数：3

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