Photoelectrical properties of non-uniform GaAs structures under infrared laser illumination

被引：1

作者：

Asmontas, S

Gradauskas, J

Seliuta, D

Silenas, A

Sirmulis, E

Marmur, IY

机构：

来源：

NONRESONANT LASER-MATTER INTERACTION (NLMI-9) | 1997年 / 3093卷

关键词：

D O I：

10.1117/12.271703

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report our results of experimental study of photoelectrical properties of GaAs p-n and 1-h junctions illuminated with pulsed CO2 laser light. The current-voltage and voltage-power characteristics are investigated. It is demonstrated that photoemission of hot carriers across the potential barrier and the crystal lattice heating are the dominant mechanisms in the photovoltage formation. The obtained results show that hot-carrier effects in inhomogeneous GaAs can be used to detect very short infrared laser pulses.

引用

页码：35 / 40

页数：6