Thermal Treatment of Ultrathin Pentacene Thin-Film Transistors

被引：0

作者：

Heya, Akira ^{[1
]}

Matsuo, Naoto ^{[1
]}

机构：

[1] Univ Hyogo, Dept Mat Sci & Chem, Himeji, Hyogo 6712280, Japan

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2015年 / 618卷 / 01期

关键词：

Ultrathin pentacene film; OTFT; Thermal treatment; Degradation; Oxidation; FIELD-EFFECT TRANSISTORS;

D O I：

10.1080/15421406.2015.1075820

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Structural properties and influence of thermal treatment on electrical properties for organic thin-film transistor (OTFT) with 3nm-thickness active layer pentacene were investigated. The pentacene film was preferentially oriented to (00l) of thin-film phase and carriers conducted thought standing molecules slantingly. The carrier mobility of the ultrathin OTFT was decreased, and the threshold voltage was shifted to negative direction by thermal treatment. For the ultrathin OTFT, the carrier conduction was affected by H2O and O-2 because of change in the interface state and the hole localization state by adsorption of O-2 and H2O and oxidation.

引用

页码：83 / 88

页数：6

共 16 条

[1] Spatially correlated charge transport in organic thin film transistors [J].

Dinelli, F ;

Murgia, M ;

Levy, P ;

Cavallini, M ;

Biscarini, F ;

de Leeuw, DM .

PHYSICAL REVIEW LETTERS, 2004, 92 (11) :116802-1

[2] Ultrathin organic films grown by organic molecular beam deposition and related techniques [J].

Forrest, SR .

CHEMICAL REVIEWS, 1997, 97 (06) :1793-1896

[3] Evidence of water-related discrete trap state formation in pentacene single-crystal field-effect transistors [J].

Goldmann, C ;

Gundlach, DJ ;

Batlogg, B .

APPLIED PHYSICS LETTERS, 2006, 88 (06)

[4] Oxygen effect on the electrical characteristics of pentacene transistors [J].

Hu, Yan ;

Dong, Guifang ;

Hu, Yuanchuan ;

Wang, Liduo ;

Qiu, Yong .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (21) :4553-4556

[5] Accumulation and depletion layer thicknesses in organic field effect transistors [J].

Kiguchi, M ;

Nakayama, M ;

Fujiwara, K ;

Ueno, K ;

Shimada, T ;

Saiki, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (12A) :L1408-L1410

[6] Nucleation of pentacene thin films on silicon dioxide modified with hexamethyldisilazane [J].

Killampalli, AS ;

Engstrom, JR .

APPLIED PHYSICS LETTERS, 2006, 88 (14)

[7] Observation of the hysteresis behavior of pentacene thin-film transistors in I-V and C-V measurements [J].

Kim, Woo Jin ;

Kim, Chang Su ;

Jo, Sung Jin ;

Lee, Sung Won ;

Lee, Se Jong ;

Baik, Hong Koo .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (01) :H1-H4

[8] Influence of H2O and O2 on threshold voltage shift in organic thin-film transistors:: Deprotonation of SiOH on SiO2 gate-insulator surface [J].

Kumaki, Daisuke ;

Umeda, Tokiyoshi ;

Tokito, Shizuo .

APPLIED PHYSICS LETTERS, 2008, 92 (09)

[9] High-performance bottom electrode organic thin-film transistors [J].

Kymissis, I ;

Dimitrakopoulos, CD ;

Purushothaman, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (06) :1060-1064

[10] Dependence of electrical properties of pentacene Thin-Film Transistor on active layer thickness [J].

Matsuo, Naoto ;

Heya, Akira .

IEICE ELECTRONICS EXPRESS, 2011, 8 (06) :360-366

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