Permittivity enhancement of hafnium dioxide high-κ films by cerium doping

被引：70

作者：

Chalker, P. R. ^{[1
]}

Werner, M. ^{[1
]}

Romani, S. ^{[1
]}

Potter, R. J. ^{[1
]}

Black, K. ^{[2
]}

Aspinall, H. C. ^{[2
]}

Jones, A. C. ^{[2
]}

Zhao, C. Z. ^{[3
]}

Taylor, S. ^{[3
]}

Heys, P. N. ^{[4
]}

机构：

[1] Univ Liverpool, Dept Engn Mat Sci & Engn, Liverpool L69 3GH, Merseyside, England

[2] Univ Liverpool, Dept Chem, Liverpool L69 3ZD, Merseyside, England

[3] Univ Liverpool, Dept Elect Engn & Elect, Liverpool L69 3GJ, Merseyside, England

[4] SAFC Hitech, Wirral CH62 3QF, Merseyside, England

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 18期

基金：

英国工程与自然科学研究理事会;

关键词：

annealing; atomic layer deposition; cerium; current density; doping; hafnium compounds; high-k dielectric thin films; leakage currents; permittivity;

D O I：

10.1063/1.3023059

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of cerium doping on the dielectric properties of hafnium dioxide is reported. Thin films of cerium-doped hafnium oxide Ce-x-Hf1-xO2 (x=0.10,0.17,0.34) have been grown by liquid injection atomic layer deposition. After annealing at 900 degrees C, all films were transformed from an amorphous state into a stabilized cubic or tetragonal phase. As-deposited films of Ce-0.1-Hf0.9O2 showed low hysteresis voltages and negligible flat band voltage shifts. After annealing to form the crystalline cubic or tetragonal phase, the relative permittivity (kappa) increased from 25 to 32 at 100 kHz with leakage current densities at +/- 1 MV cm(-1) of similar to 1.58x10(-5) A cm(-2).

引用

页数：3

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