Growth and characterization of SnS2(1-x)Se2x alloys

被引：5

作者：

Tsai, Chi-Feng ^{[1
]}

Lin, Der-Yuh ^{[1
]}

Ko, Tsung-Shine ^{[1
]}

Hwang, Sheng-Beng ^{[2
]}

机构：

[1] Natl Changhua Univ Educ, Dept Elect Engn, 2 Shi Da Rd, Changhua 50074, Taiwan

[2] Chien Kuo Technol Univ, Dept Elect Engn, 1 Chiehshou North Rd, Changhua 500, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷

关键词：

TRANSITION-METAL DICHALCOGENIDES; TUNABLE CHEMICAL-COMPOSITIONS; SNSE2(1-X)S2X ALLOYS; OPTICAL-PROPERTIES; NANOSHEETS; PERFORMANCE; SNS2;

D O I：

10.7567/1347-4065/ab03c8

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, SnS2(1-x)Se2x alloys layered crystals were grown by the chemical vapor transport method. The crystal structure characterization has been substantiated by X-ray diffraction (XRD) and transmission electron microscope technologies. From each sample's XRD pattern, the peaks corresponds to (001), (002), (003), (004), and (005) which were found and used to determine the lattice constants. The band gap energies modulated from 2.28 eV (SnS2) to 1.23 eV (SnSe2) with the increasing content of Se, which were verified by piezoreflectance (PzR) spectra and absorption spectra. By PzR spectra and absorption spectra, the empirical relation between band gap energies and composition ratio, according to the extended Vegard's law, has been predicted; accorded with a bowing parameter b of 0.56 and 0.54 eV, respectively. (C) 2019 The Japan Society of Applied Physics

引用

页数：5

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