Study on field emission and photoluminescence properties of ZnO/graphene hybrids grown on Si substrates

被引:75
作者
Ding, Jijun [1 ,2 ]
Yan, Xingbin [1 ]
Xue, Qunji [1 ]
机构
[1] Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China
[2] Xi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Shaanxi, Peoples R China
关键词
Nanostructures; Sputtering; X-ray diffraction; Luminescence; Electrical properties; GRAPHENE; FILMS; ZNO; ARRAYS;
D O I
10.1016/j.matchemphys.2012.01.051
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Zinc oxide/graphene (ZnO/G) hybrids are prepared on n-Si (1 0 0) substrates by electrophoretic deposition and magnetron sputtering technique. The crystal structure, morphology and photoluminescence (PL) properties of the ZnO/G hybrids are analyzed via X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM) and fluorescence-phosphorescence spectrometer, respectively. The results indicate that the crystal quality of ZnO nanostructure deteriorates after depositing graphene buffer layer. Whereas many three dimensional stacking blowballs form in the ZnO/G hybrid, creating a larger surface area than that of ZnO nanostructure. The photoluminescence (PL) spectrum of the ZnO/G hybrid contains multi-peaks, which are consistent with ZnO nanostructure except for two new peaks at 390 and 618 nm. In addition, field emission measurement reveals that E-to and E-thr decrease from 8.01V mu m(-1) and 14.90V mu m(-1) of the ZnO nanostructure to 2.72 V mu m(-1) and 7.70 V mu m(-1) of the ZnO/G hybrid. ZnO/G hybrid is characteristic of having excellent emitting behavior suitable for application in field emission technology. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:405 / 409
页数:5
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