High Power K-band GaN on SiC CPW Monolithic Power Amplifier

被引：0
|
作者：
Cengiz, Omer [1 ,2 ]
Sen, Ozlem [2 ]
Ozbay, Ekmel [2 ,3 ]
机构：
[1] Middle E Tech Univ, Dept Elect & Elect Engn, TR-06800 Ankara, Turkey
[2] Bilkent Univ, Nanotechnol Res Ctr NANOTAM, TR-06800 Ankara, Turkey
[3] Bilkent Univ, Dept Phys, TR-06800 Ankara, Turkey
来源：
2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC) | 2014年
关键词：
AlGaN/GaN; HEMTs; MMIC power amplifier; radiation; space;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a high power amplifier at K-band (20.2 - 21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 mu m HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain over 20 dB for Vds=15V and measured output power of over 31 dBm at 20.2 Ghz. PAE of the amplifier is around 22% for desired frequency band. Initial radiation hardness tests indicate a suitable stability of the technology in space.
引用
收藏
页码：548 / 551
页数：4
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