Low cross-talk 2 x 2 silicon electro-optic switch matrix with a double-gate configuration

被引：35

作者：

Xing, Jiejiang ^{[1
]}

Li, Zhiyong ^{[1
]}

Yu, Yude ^{[1
]}

Yu, Jinzhong ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

OPTICS LETTERS | 2013年 / 38卷 / 22期

基金：

中国国家自然科学基金;

关键词：

OPTICAL SWITCHES; LOW-POWER; NETWORKS;

D O I：

10.1364/OL.38.004774

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this study, a low cross-talk 2 x 2 silicon electro-optic switch matrix based on a double-gate configuration is proposed and experimentally demonstrated. The switch matrix consists of four Mach-Zehnder-based 2 x 2 switching elements with 400 mu m long modulation arms. Low cross-talk values of -31 and -43 dB are, respectively, obtained for the "cross" and "bar" states over a 40 nm wide wavelength range around 1550 nm. The values for the total steady-state power consumption of the "cross" and "bar" states are 40.8 and 19.1 mW, respectively. (C) 2013 Optical Society of America

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收藏

页码：4774 / 4776

页数：3

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