AlN/GaN insulated gate HEMTs with HfO2 gate dielectric

被引：20

作者：

Deen, D. A. ^{[1
]}

Binari, S. C. ^{[1
]}

Storm, D. F. ^{[1
]}

Katzer, D. S. ^{[1
]}

Roussos, J. A. ^{[1
]}

Hackley, J. C. ^{[2
]}

Gougousi, T. ^{[2
]}

机构：

[1] USN, Res Lab, Microelect Div, Washington, DC 20375 USA

[2] Univ Maryland Baltimore Cty, Dept Phys, Baltimore, MD 21250 USA

来源：

ELECTRONICS LETTERS | 2009年 / 45卷 / 08期

关键词：

MOLECULAR-BEAM EPITAXY; ALGAN/GAN HEMTS; OXIDE;

D O I：

10.1049/el.2009.3688

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlN/GaN single heterojunction MOS-HEMTs grown by molecular beam epitaxy have been fabricated utilising HfO2 high-K dielectrics deposited by atomic layer deposition. Typical DC transfer characteristics of 1.3 mu m gate length devices show a maximum drain current of 950 mA/mm and a transconductance of 210 mS/mm with gate currents of 5 mu A/mm in pinch-off. Unity gain cutoff frequencies, f(t) and f(max), were measured to be 9 and 32 GHz, respectively.

引用

页码：423 / U57

页数：2

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