Low-temperature Solution Process for Oxide TFT

被引：0
|
作者：
Jeong, Woong Hee [1 ]
Kim, Dong Lim [1 ]
Kim, Hyun Jae [1 ]
机构：
[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea
来源：
2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS | 2012年
关键词：
THIN-FILM TRANSISTORS; HIGH-PERFORMANCE; FABRICATION; NITRATE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The importance of the low-temperature solution process for oxide thin-film transistor (TFT) is growing as the demand on the ultra-large and flexible display is increased. Among diverse approaches for the low-temperature solution process, the formation of dual active layer and utilization of nitrate precursor are proposed in this paper. From electrical and structural analyses, the two proposed approaches proved their competence as effective solutions to achieve high performance TFT in low-temperature annealing below 350 degrees C.
引用
收藏
页码：301 / 304
页数：4
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